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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2898
DESCRIPTION With TO-220C package High voltage,high speed High power switching
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER
Collector-base voltage
Collector-emitter voltage

CONDITIONS Open emitter Open base
CHA IN
Base current
Emitter-base voltage
Collector current (DC)
E SEM NG
Open collector
OND IC
TOR UC
VALUE 500 400 7 8 16 4
UNIT V V V A A A W ae ae
Collector current-Peak
Collector power dissipation Junction temperature Storage temperature
TC=25ae
50 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A; L=100mH IE=10mA ;IC=0 IC=4.0A; IB=0.8A(pulse test) IC=4.0A; IB=0.8A(pulse test) VCB=400V; IE=0 VCE=350V; RBE= IC=4A ; VCE=5V(pulse test) IC=8A ; VCE=5V(pulse test) 15 MIN 400 7
2SC2898
SYMBOL VCEO(SUS) V(BR) EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2
TYP.
MAX
UNIT V V
1.0 1.5 50 50 |I |I
V V A A
Switching times ton ts tf
Fall time
Turn-on time Storage time

CHA IN
E SEM NG
IC=8A, IB1=-IB2=1.6A VCCO 150V
OND IC
TOR UC
7 0.8 2.0 0.8 |I |I |I s s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2898

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance: A
0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2898

CHA IN
E SEM NG
OND IC
TOR UC
4


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